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Model Number : | YP10401560T |
Brand Name : | SZHUASHI |
Price : | Prices are negotiable |
Delivery Time : | 2-10days |
60W High Gain Wide Bandwidth Capability Frequency up to 4000MHz SZHUASHI YP10401560T for High Frequency Applications
Description
Innotion’s YP10401560T is a 60-watt, unmatched gallium nitride
(GaN) high electron mobility transistor (HEMT) designed
specifically with high efficiency, high gain and wide bandwidth
capabilities with frequency up to 4000MHz. The transistor is
supplied in a ceramic /metal flange
package.
Features
High Efficiency and Linear Gain Operation,Negative Gate Voltage and
Bias Sequencing Required Excellent Thermal Stability and Excellent
Ruggedness,Metal Based Package Sealed with Ceramic-Epoxy Lid.Gold
Metallization System: Chip-Wire Bond-Package.
Pout | 60W |
Working Voltage | 28V |
Frequency | 4000MHz |
Always final Inspection before shipment;
1 year warranty for our products.
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